- GF01 - Standardisation
- GF02 - Chemical sensor, bio-sensors and bio-interfaces
- GF03 - Membrane technologies: from nanofluidics to nanoresonators
- GF04 - Catalysts for energy applications
- GF05 - Functionalized materials for composites and energy applications
- GF06 - Functional coatings and interfaces in high-performance, low-weight technological applications
- GF07 - Integration of graphene and related materials (GRMs) with semiconductor devices: a scalable back-end approach
- GF08 - New layered materials and heterostructures
- GF09 - Passive components for RF-applications
- GF10 - Integration with Si photonics
- GF11 - Prototypes based on graphene, related two-dimensional crystals, and hybrid systems
- GF12 - Open topic
- GF13 - Updating the Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
GF10 - Integration with Si photonics
Motivation
The combination of graphene's excellent electronic and optical properties with its large-scale manufacturability and compatibility with silicon technology make it a promising candidate for photonic integrated circuits. These systems are based on the convergence and co-integration of a large number of passive optical components (such as waveguides, (de-)multiplexers, and filters) with active optoelectronic devices (modulators, switches and photodetectors) on a single chip. Other layered materials also have potential, and are in need of further exploration
This call topic targets an approach to integrate graphene and related materials (GRMs) with Si waveguides and passive optical circuitry for next generation computing and communications systems. Specifically, a scalable approach should be demonstrated for future wafer-scale integration of existing CMOS-like Si manufacturing infrastructures. This should go beyond proof-of-principle (stand-alone) devices, and scalability of the technology should be demonstrated at pilot line level.
Complementarity is envisaged with WP5 (Optoelectronics), WP1 (Materials), WP4 (High-frequency electronics), WP7 (Sensors), WP8 (flexible electronics). Consortia should have proven wafer-scale (4" or larger) fabrication capabilities at industrial scale for CMOS and silicon photonics and interconnect circuitry. Proven experience with non-linear optical data processing is highly welcome.
Objectives
Objectives 1-3 are compulsory. Objective 4 is optional
- Demonstrate the potential for wafer-scale (4” or larger) integration of GRMs with opto-electronic circuits based on a Si platform.
- Demonstrate an optical interconnect (3 GBit/s for modulator + receiver), based on the integration of GRM-based modulators and detectors with Si photonic circuits. The device should cover all commercially important telecommunication wavelengths from the O-band (1260 to 1360 nm) to the U-band (1525 to 1675 nm).
- The performance and energy-efficiency of the circuits should be optimized and assessed using state-of-the-art metrology techniques, and benchmarked with existing technologies.
- Demonstrate the operation of nonlinear devices for all-optical data processing.
Impact
- A scalable approach for GRM integration with wafer-scale Si photonics platforms
- Demonstrate the potential of GRM-based optical interconnects and benchmarking with existing technologies.
- Strengthen the interaction of the Flagship with industry.
- Add to the Flagship a partner with proven CMOS-fab capabilities