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GF08 - New layered materials and heterostructures

Motivation

Functional electronics and optoelectronics applications, based on materials with a spectral gap in the band structure, would require either modification of graphene, or its combination with other semiconductors in hybrid devices. A promising route towards making such devices is the use of graphene in conjunction with atomic layers of transition metal dichalcogenides (MX2) and gallium chalcogenides (GaX), or by creating graphene heterostructures with thin films of III-V semiconductors. The feasibility of separating and even synthesizing atomically thin layers of  MoS2, MoSe2, WSe2, and WS2 has been demonstrated, and this offers new perspectives for the development of electronics and optoelectronics based on atomically thin films.

The aim of this Call is to expand the materials base and characterisation capabilities of the Flagship, by targeting the investigation of atomically thin two-dimensional (2d) systems. This includes growth and studies of atomically thin 2d crystals beyond graphene; production of graphene heterostructures with semiconducting materials; investigation of their electronic and optical properties; development of applications of hybrid systems in functional device, and growth and preparation of new layered systems for spintronics . 
Complementarity is envisaged with WP3(fundamental science), WP1(Materials), WP5(Optoelectronics), WP4(High-Speed Electronics), WP6(Spintronics), WP9(Energy). The presence of one or more industrial partners in a Consortium is desirable, but not necessary.

Objectives

Proposals should target at least one of the following objectives:

  • Scalable growth of new types of atomically thin two-dimensional crystals beyond graphene and production of graphene heterostructures with semiconducting materials. We expect proposals offering the expansion of fundamental studies onto a range of MX2 and GaX crystals, graphene heterostructures with all of the above, and heterostructures of graphene with III-V semiconductors. The applicants will be expected to demonstrate their ability to produce such new systems and to perform their characterisation with changing structural and electronic properties and defects.
  • Characterisation of electronic and optical properties of new atomically thin 2d materials and implementation of hybrid graphene systems in functional devices. We expect that the applicants will offer the access to characterisation infrastructure such as STM, advance optical characterisation (e.g., time-resolved or microcavity-enhanced optics, SNOM, ARPES), or THz characterisation technologies. In device applications, the focus is on tunnelling transistors, optoelectronics, or energy harvesting. The proposals should aim to demonstrate the proposed functionality in a prototype device.
  • New GRMs for spintronics devices. Methods to induce locally spin-orbit interaction to couple electric and spin signals by adsorption of molecules or adatoms in order to generate spin signals by electric fields. Methods to fabricate systems which are (locally) ferromagnetic in order to make spin valve devices; or produce nanoribbons with edge-induced magnetic (ferro- or antiferromagnetic) properties.

Impacts

  • Real world applications in functional electronics or high-end instrumentation development (e.g., detectors, sensors, etc).
  • New device concepts that will change the currently available technologies and production methods in industrial sectors such as Electronics, Energy, Sensors etc.
  • Stretching the fundamental limits of miniaturization in broadly used devices.

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